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| IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOSTM2 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.1 100 V m A * Ideal for high-frequency switching and synchronous rectification * Halogen-free according to IEC61249-2-21 Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt T C=25 C I D=100 A, R GS=25 I D=100 A, V DS=68 V, di /dt =100 A/s, T j,max=175 C Value 100 100 400 826 6 20 T C=25 C 300 -55 ... 175 55/175/56 mJ kV/s V W C Unit A V GS P tot T j, T stg Rev. 1.2 page 1 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=68 V, V GS=0 V, T j=25 C V DS=68 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 85 2 3 0.1 4 1 A V - 10 1 4.1 100 100 5.4 nA m 81 3.8 1.8 162 5.1 S 1) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. See figure 3 Tjmax=150 C and duty cycle D=0.01 for Vgs<-5V 2) 3) 4) 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=50 A, R G=1.6 V GS=0 V, V DS=40 V, f =1 MHz - 9090 1710 120 28 42 64 21 12100 pF 2270 180 42 61 96 31 ns Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=100 A, V GS=0 to 10 V - 47 31 50 135 5.1 130 62 46 72 180 173 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s - 1.0 110 345 100 400 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 350 120 300 100 250 80 P tot [W] 200 I D [A] 150 100 50 0 0 50 100 150 200 60 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 1000 1 s 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 100 s 1 ms 0.2 0.1 0.05 0.02 0.01 100 10-1 I D [A] 10 ms DC Z thJC [K/W] 10 10 -2 single pulse 1 0.1 1 10 100 10-3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.2 page 4 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 8V 10 V 7V 6.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 320 12 4.5 V 240 R DS(on) [m] 6V 9 5V 5.5 V I D [A] 160 5.5 V 6 6V 10 V 80 5V 3 4.5 V 0 0 1 2 3 4 5 0 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 250 160 200 120 150 g fs [S] 80 175 C 25 C I D [A] 100 50 40 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 1.2 page 5 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 12 4 3.5 10 3 8 250 A 2500 A R DS(on) [m] 2.5 98 % 6 typ V GS(th) [V] 100 140 180 2 1.5 4 1 2 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 104 Ciss Coss 25 C 175 C 175 C, 98% 102 C [pF] I F [A] 103 Crss 25 C, 98% 101 102 101 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.2 page 6 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 12 40 V 10 20 V 60 V 100 100 C 25 C 8 V GS [V] 1000 I AS [A] 150 C 6 10 4 2 1 1 10 100 0 0 50 100 150 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 100 V GS Qg 95 V BR(DSS) [V] 90 85 V g s(th) 80 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 75 T j [C] Rev. 1.2 page 7 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G PG-TO220-3: Outline Rev. 1.2 page 8 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Rev. 1.2 page 9 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G PG-TO-263 (D-Pak) Rev. 1.2 page 10 2010-01-14 IPB051NE8N G IPI05CNE8N G IPP054NE8N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 11 2010-01-14 |
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